US Patent Issued to Semiconductor Energy Laboratory on March 25 for "Memory device and electronic device" (Japanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,898, issued on March 25, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Memory device and electronic device" was invented by Shunpei Yamazaki (Tokyo), Kiyoshi Kato (Kanagawa, Japan), Takahiko Ishizu (Kanagawa, Japan) and Tatsuya Onuki (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device having long data retention time and high reliability is provided. The memory device includes a driver circuit and a plurality of memory cells, the memory cell includes a transistor and a capacitor, and the transistor includes a metal oxide in a channel formation region. The transistor includes a first gate and a...