US Patent Issued to Semiconductor Energy Laboratory on March 18 for "Sputtering target, method for manufacturing sputtering target, and method for forming thin film" (Japanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,252,775, issued on March 18, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Sputtering target, method for manufacturing sputtering target, and method for forming thin film" was invented by Shunpei Yamazaki (Tokyo), Tetsunori Maruyama (Kanagawa, Japan), Yuki Imoto (Kanagawa, Japan), Hitomi Sato (Kanagawa, Japan), Masahiro Watanabe (Tochigi, Japan), Mitsuo Mashiyama (Tochigi, Japan), Kenichi Okazaki (Tochigi, Japan), Motoki Nakashima (Kanagawa, Japan) and Takashi Shimazu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "There have been cases where transistors formed using oxide semiconductors are inferior in reliability to...