ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,653, issued on March 11, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Shunpei Yamazaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film ...