US Patent Issued to Semiconductor Energy Laboratory on June 3 for "Semiconductor device and method for manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,193, issued on June 3, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and method for manufacturing the same" was invented by Yoshinobu Asami (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with low parasitic capacitance is provided. The semiconductor device includes a first oxide insulator, an oxide semiconductor, a second oxide insulator, a gate insulating layer, a gate electrode layer, source and drain electrode layers and an insulating layer. The oxide semiconductor includes first to fifth regions. The first region overlaps with the source electrode layer. The ...