US Patent Issued to Semiconductor Energy Laboratory on June 3 for "Semiconductor device and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,189, issued on June 3, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and manufacturing method thereof" was invented by Shunpei Yamazaki (Tokyo), Kengo Akimoto (Atsugi, Japan) and Daisuke Kawae (Chiba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided o...