US Patent Issued to Semiconductor Energy Laboratory on June 17 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,224, issued on June 17, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device and method for manufacturing the same" was invented by Hiromichi Godo (Kanagawa, Japan) and Tetsuhiro Tanaka (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the...