ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,335, issued on July 29, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device and manufacturing method thereof" was invented by Shunpei Yamazaki (Setagaya, Japan), Masahiko Hayakawa (Atsugi, Japan) and Tatsuya Honda (Isehara, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and dra...