ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,373, issued on July 29, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Shuhei Nagatsuka (Atsugi, Japan), Takuya Kawata (Atsugi, Japan) and Ryota Hodo (Atsugi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes a first insulator, a transistor over the first insulator, a second insulator over the transistor, a third insulator over the second insulator, a fourth insulator over the third insulator, and an opening region. The opening region i...