ALEXANDRIA, Va., July 23 -- United States Patent no. 12,366,782, issued on July 22, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Metal oxide and field-effect transistor" was invented by Shunpei Yamazaki (Setagaya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "To provide a novel material. In a field-effect transistor including a metal oxide, a channel formation region of the transistor includes a material having at least two different energy band widths. The material includes nano-size particles each with a size of greater than or equal to 0.5 nm and less than or equal to 10 nm. The nano-size particles are dispersed or distributed in a mosaic pattern."
The patent was file...