US Patent Issued to Semiconductor Energy Laboratory on July 15 for "Semiconductor device including oxide semiconductor layer" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,953, issued on July 15, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device including oxide semiconductor layer" was invented by Shunpei Yamazaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor having high field-effect mobility is provided. In order that an oxide semiconductor layer through which carriers flow is not in contact with a gate insulating film, a buried channel structure in which the oxide semiconductor layer through which carriers flow is separated from the gate insulating film is employed. Specifically, an oxide semiconductor layer having high conductivity is provided betwe...