US Patent Issued to Semiconductor Energy Laboratory on July 15 for "Semiconductor device and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,037, issued on July 15, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and manufacturing method thereof" was invented by Yoshiyuki Kurokawa (Sagamihara, Japan), Takayuki Ikeda (Atsugi, Japan), Hikaru Tamura (Zama, Japan), Munehiro Kozuma (Isehara, Japan), Masataka Ikeda (Atsugi, Japan) and Takeshi Aoki (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transisto...