US Patent Issued to Semiconductor Energy Laboratory on July 15 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,954, issued on July 15, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Tetsuya Kakehata (Isehara, Japan), Yasuhiro Jinbo (Isehara, Japan), Yuji Egi (Atsugi, Japan), Fumito Isaka (Zama, Japan), Shuntaro Kochi (Yokohama, Japan) and Masahiro Takahashi (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulato...