ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,732, issued on July 15, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).
"Semiconductor device and driving method thereof" was invented by Hiroki Inoue (Kanagawa, Japan), Seiichi Yoneda (Kanagawa, Japan) and Yusuke Negoro (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a small circuit scale is provided. The semiconductor device includes a first circuit and a second circuit. The first circuit includes first to n-th (n is an integer of 2 or more) transistors and the second circuit includes (n+1)-th to 2n-th transistors. The first to n-th transistors are connected in parallel to each other and t...