US Patent Issued to Semiconductor Energy Laboratory on July 15 for "Method for manufacturing a semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,955, issued on July 15, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method for manufacturing a semiconductor device" was invented by Junichi Koezuka (Tochigi, Japan) and Yasutaka Nakazawa (Tochigi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The first insulating layer is in c...