US Patent Issued to Semiconductor Energy Laboratory on July 1 for "Semiconductor device comprising oxygen blocking films" (Japanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,403, issued on July 1, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device comprising oxygen blocking films" was invented by Yuichi Yanagisawa (Atsugi, Japan), Ryota Hodo (Atsugi, Japan) and Satoru Okamoto (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second insulator provided between the first insulator and the first oxide, a second oxide in contact with the first insulator and in contact with a side surface of the firs...