ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,415, issued on July 1, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Oxide semiconductor transistor" was invented by Shunpei Yamazaki (Setagaya, Japan), Katsuaki Tochibayashi (Isehara, Japan), Ryota Hodo (Atsugi, Japan), Kentaro Sugaya (Atsugi, Japan) and Naoto Yamade (Isehara, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor a...