ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,491, issued on July 1, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Memory device" was invented by Shunpei Yamazaki (Setagaya, Japan), Hajime Kimura (Atsugi, Japan), Takanori Matsuzaki (Atsugi, Japan), Tatsuya Onuki (Atsugi, Japan), Yuki Okamoto (Isehara, Japan), Hideki Uochi (Atsugi, Japan) and Satoru Okamoto (Isehara, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A highly reliable memory device is provided. On a side surface of a first conductor extending in a first direction, a first insulator, a first semiconductor, a second insulator, a second semiconductor, and a third insulator are provided in this order wh...