US Patent Issued to Semiconductor Energy Laboratory on July 1 for "Manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,460, issued on July 1, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Manufacturing method of semiconductor device" was invented by Masashi Oota (Atsugi, Japan), Noritaka Ishihara (Koza, Japan), Motoki Nakashima (Atsugi, Japan), Yoichi Kurosawa (Atsugi, Japan), Shunpei Yamazaki (Setagaya, Japan), Yasuharu Hosaka (Tochigi, Japan), Toshimitsu Obonai (Shimotsuke, Japan) and Junichi Koezuka (Tochigi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device incl...