ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,534, issued on Jan. 28, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Jun Koyama (Kanagawa, Japan) and Kiyoshi Kato (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electr...