ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,070, issued on Jan. 27, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).
"Memory device" was invented by Takanori Matsuzaki (Kanagawa, Japan), Tatsuya Onuki (Kanagawa, Japan) and Takeshi Aoki (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A highly reliable memory device is provided. The memory device includes a memory control unit that includes an input/output unit, a control unit, and a first management unit and a memory unit that includes a plurality of memory blocks. The first management unit includes a plurality of first memory elements, the control unit has a function of converting an address input through the ...