US Patent Issued to Semiconductor Energy Laboratory on Jan. 27 for "Light-receiving device with buffer layer and light-emitting and light-receiving apparatus with buffer layer" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,640, issued on Jan. 27, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Light-receiving device with buffer layer and light-emitting and light-receiving apparatus with buffer layer" was invented by Yasuhiro Niikura (Tokyo), Daisuke Kubota (Kanagawa, Japan), Taisuke Kamada (Saitama, Japan), Sachiko Kawakami (Kanagawa, Japan), Anna Tada (Kanagawa, Japan) and Satoshi Seo (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-...