ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,114, issued on Jan. 20, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Seiya Saito (Atsugi, Japan), Yuto Yakubo (Atsugi, Japan), Tatsuya Onuki (Atsugi, Japan) and Shuhei Nagatsuka (Atsugi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A novel semiconductor device is provided. The semiconductor device includes a driver circuit including a plurality of transistors using a silicon substrate for channels, and a first transistor layer and a second transistor layer including a plurality of transistors using a metal oxide for channels. The first transistor layer and the second transis...