ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,533, issued on Jan. 20, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).
"Semiconductor device, amplifier, and electronic device" was invented by Kei Takahashi (Kanagawa, Japan), Takayuki Ikeda (Kanagawa, Japan), Shuji Fukai (Kanagawa, Japan) and Shunpei Yamazaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A small semiconductor device is provided. A semiconductor device with low power consumption is provided. A semiconductor device with a high degree of integration is provided. The semiconductor device includes a first transistor, an insulating layer over the first transistor, a conductive layer, and a gate d...