US Patent Issued to Semiconductor Energy Laboratory on Feb. 4 for "Semiconductor device using oxide and method for manufacturing semiconductor device using oxide" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,771, issued on Feb. 4, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device using oxide and method for manufacturing semiconductor device using oxide" was invented by Tatsuya Onuki (Atsugi, Japan), Takanori Matsuzaki (Atsugi, Japan) and Shunpei Yamazaki (Setagaya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a large storage capacity is provided. The semiconductor device includes an oxide provided over a substrate, a plurality of first conductors over the oxide, a first insulator that is provided over the plurality of first conductors and includes a plurality of openings ...