US Patent Issued to Semiconductor Energy Laboratory on Feb. 4 for "Semiconductor device comprising oxide semiconductor layer containing a c-axis aligned crystal" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,249, issued on Feb. 4, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device comprising oxide semiconductor layer containing a c-axis aligned crystal" was invented by Shunpei Yamazaki (Setagaya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode laye...