US Patent Issued to Semiconductor Energy Laboratory on Feb. 4 for "Semiconductor device and manufacturing method of the semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,247, issued on Feb. 4, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device and manufacturing method of the semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Ryota Hodo (Kanagawa, Japan), Tetsuya Kakehata (Kanagawa, Japan) and Shinya Sasagawa (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor with a high on-state current and a semiconductor device with high productivity are provided. Included are a first oxide, a second oxide, a third oxide, and a fourth oxide over a first insulator; a first conductor over the third oxide; a second conductor over the fourth oxide...