US Patent Issued to Semiconductor Energy Laboratory on Feb. 3 for "Method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,381, issued on Feb. 3, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Method for manufacturing semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Takashi Hirose (Kanagawa, Japan), Atsushi Shibazaki (Kanagawa, Japan) and Yasuhiro Jinbo (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device with high productivity is provided. The method includes a step of forming a first insulator, a second insulator, and a third insulator in this order using a multi-chamber apparatus; a step of forming a fourth insulator, a fifth insulator, a first oxide film, a s...