ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,540,397, issued on Feb. 3, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Method for forming metal oxide" was invented by Shunpei Yamazaki (Setagaya, Japan), Tetsuya Kakehata (Isehara, Japan), Sachiko Kawakami (Atsugi, Japan), Fumito Isaka (Zama, Japan) and Yuji Egi (Atsugi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A novel method for forming a metal oxide is provided. The metal oxide is formed using a precursor with a high decomposition temperature while a substrate is heated to higher than or equal to 300deg C. and lower than or equal to 500deg C. In the formation, plasma treatment, microwave treatment, or heat tr...