ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,696, issued on Feb. 18, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device and method for fabricating the same" was invented by Shunpei Yamazaki (Tokyo), Hideomi Suzawa (Kanagawa, Japan), Shinya Sasagawa (Kanagawa, Japan), Motomu Kurata (Kanagawa, Japan) and Masashi Tsubuku (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device ...