US Patent Issued to Semiconductor Energy Laboratory on Feb. 10 for "Ferroelectric device and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,332, issued on Feb. 10, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Ferroelectric device and semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Yasuhiro Jinbo (Kanagawa, Japan), Hitoshi Kunitake (Kanagawa, Japan), Kazuaki Ohshima (Kanagawa, Japan), Masashi Oota (Kanagawa, Japan), Kazuma Furutani (Kanagawa, Japan) and Takeshi Aoki (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric device including a metal oxide film having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor, a metal oxide film over the first conductor, and a second conduct...