US Patent Issued to Semiconductor Energy Laboratory on Dec. 9 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,619, issued on Dec. 9, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and method for manufacturing the same" was invented by Junichi Koezuka (Tochigi, Japan), Yukinori Shima (Gunma, Japan), Hajime Tokunaga (Kanagawa, Japan), Toshinari Sasaki (Tokyo), Keisuke Murayama (Kanagawa, Japan) and Daisuke Matsubayashi (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device inclu...