US Patent Issued to Semiconductor Energy Laboratory on Dec. 9 for "Semiconductor device, manufacturing method thereof, and electronic device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,615, issued on Dec. 9, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device, manufacturing method thereof, and electronic device" was invented by Motomu Kurata (Kanagawa, Japan), Shinya Sasagawa (Kanagawa, Japan), Ryota Hodo (Kanagawa, Japan), Katsuaki Tochibayashi (Kanagawa, Japan), Tomoaki Moriwaka (Kanagawa, Japan), Jiro Nishida (Kanagawa, Japan), Hidekazu Miyairi (Kanagawa, Japan) and Shunpei Yamazaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a t...