US Patent Issued to Semiconductor Energy Laboratory on Dec. 16 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,707, issued on Dec. 16, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Yukinori Shima (Gunma, Japan) and Kenichi Okazaki (Tochigi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a first transistor, a second transistor, a first insulating layer, and a second insulating layer. The first transistor includes a first semiconductor layer, a first gate insulating layer, and a first...