ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,187, issued on Aug. 5, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Tatsuya Onuki (Atsugi, Japan), Takanori Matsuzaki (Atsugi, Japan), Yuki Okamoto (Isehara, Japan) and Shunpei Yamazaki (Setagaya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a novel structure is provided. The semiconductor device includes a silicon substrate including a first circuit, a first element layer including a second circuit, and a second element layer including a third circuit. The first circuit includes a first transistor. The second circuit includes a second transistor. ...