ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,664, issued on Aug. 5, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).
"Semiconductor device" was invented by Kazuya Hanaoka (Kanagawa, Japan), Daisuke Matsubayashi (Kanagawa, Japan), Yoshiyuki Kobayashi (Kanagawa, Japan), Shunpei Yamazaki (Tokyo) and Shinpei Matsuda (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a sour...