ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,723, issued on Aug. 5, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Shunpei Yamazaki (Tokyo) and Kensuke Yoshizumi (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor...