ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,360, issued on Aug. 26, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Masayuki Sakakura (Isehara, Japan) and Hideomi Suzawa (Atsugi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part o...