US Patent Issued to Semiconductor Energy Laboratory on Aug. 26 for "Integrated semiconductor with shared electrodes between capacitor and transistor" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,363, issued on Aug. 26, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Integrated semiconductor with shared electrodes between capacitor and transistor" was invented by Shunpei Yamazaki (Tokyo), Toshihiko Takeuchi (Kanagawa, Japan), Naoto Yamade (Kanagawa, Japan), Hiroshi Fujiki (Yamaguchi, Japan), Tomoaki Moriwaka (Kanagawa, Japan) and Shunsuke Kimura (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that can be miniaturized or highly integrated is provided.The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the ...