ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,214, issued on Aug. 19, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).
"Semiconductor device" was invented by Yuichi Yanagisawa (Kanagawa, Japan) and Yasumasa Yamane (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an insulator including an excess-oxygen region, a metal oxide over the insulator, a first oxide semiconductor over the metal oxide, a first conductor in contact with the first oxide semiconductor, a second conductor in contact with the first oxide semiconductor, and a second oxid...