US Patent Issued to Semiconductor Energy Laboratory on Aug. 19 for "Method of forming positive electrode active material, kiln, and heating furnace" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,392,555, issued on Aug. 19, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Method of forming positive electrode active material, kiln, and heating furnace" was invented by Yohei Momma (Kanagawa, Japan), Jo Saito (Kanagawa, Japan), Teruaki Ochiai (Kanagawa, Japan) and Mayumi Mikami (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To provide a method of forming a positive electrode active material with high productivity. To provide a manufacturing apparatus capable of forming a positive electrode active material with high productivity. Provided is a method of forming a positive electrode active material including...