ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,636, issued on Aug. 12, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Semiconductor device" was invented by Yutaka Okazaki (Kanagawa, Japan), Akihisa Shimomura (Kanagawa, Japan), Naoto Yamade (Kanagawa, Japan), Tomoya Takeshita (Kanagawa, Japan) and Tetsuhiro Tanaka (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor ...