US Patent Issued to Semiconductor Energy Laboratory on Aug. 12 for "Light-emitting device configured to improve light-extraction efficiency including reflective structure body between first electrode and light-emitting material, functional panel, display device, input/output device, and data processing device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,745, issued on Aug. 12, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Light-emitting device configured to improve light-extraction efficiency including reflective structure body between first electrode and light-emitting material, functional panel, display device, input/output device, and data processing device" was invented by Shunpei Yamazaki (Tokyo), Daiki Nakamura (Kanagawa, Japan), Ryo Hatsumi (Kanagawa, Japan), Rai Sato (Tochigi, Japan) and Shingo Eguchi (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A novel light-emitting device that is highly convenient, useful, or reliable is provided. A novel f...