ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,687, issued on Aug. 12, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Light-emitting device" was invented by Shunpei Yamazaki (Setagaya, Japan), Jun Koyama (Sagamihara, Japan) and Hiroyuki Miyake (Atsugi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a large...