US Patent Issued to Semiconductor Energy Laboratory on April 29 for "Semiconductor device including top-gate bottom-contact transistor" (Japanese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,824, issued on April 29, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device including top-gate bottom-contact transistor" was invented by Shunpei Yamazaki (Setagaya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gat...