US Patent Issued to Semiconductor Energy Laboratory on April 22 for "Semiconductor device and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,634, issued on April 22, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device and manufacturing method thereof" was invented by Shunpei Yamazaki (Tokyo), Junichi Koezuka (Tochigi, Japan), Masami Jintyou (Tochigi, Japan) and Yukinori Shima (Gunma, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region i...