ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,633, issued on April 22, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Composite and transistor" was invented by Shunpei Yamazaki (Setagaya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the...