US Patent Issued to Semiconductor Energy Laboratory on April 15 for "Thin film transistor array having a stacked multi-layer metal oxide channel formation region" (Japanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,291, issued on April 15, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Thin film transistor array having a stacked multi-layer metal oxide channel formation region" was invented by Shunpei Yamazaki (Setagaya, Japan), Kentaro Sugaya (Atsugi, Japan), Ryota Hodo (Atsugi, Japan), Kenichiro Makino (Ebina, Japan) and Shuhei Nagatsuka (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a plurality of transistors; each of the plurality of transistors includes a first insulator, a first oxide, a second oxide,...