US Patent Issued to Semiconductor Energy Laboratory on April 15 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,292, issued on April 15, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Kenichi Okazaki (Tochigi, Japan), Masami Jintyou (Tochigi, Japan), Takahiro Iguchi (Tochigi, Japan) and Yukinori Shima (Gunma, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer containing a metal oxide, a first insulating lay...