ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,294, issued on Nov. 25, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).
"Vertical fin-based field effect transistor (FinFET) with neutralized fin tips" was invented by Subhash Srinivas Pidaparthi (Santa Clara, Calif.), Clifford Drowley (Santa Clara, Calif.), Shahin Sharifzadeh (Santa Clara, Calif.), Andrew P. Edwards (Santa Clara, Calif.), Andrew Walker (Santa Clara, Calif.) and Francis Chai (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical fin-based field effect transistor (FinFET) device includes an array of FinFETs comprising a plurality of rows and columns of separated fins. Each of the s...