US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Nov. 11 for "Shielded gate trench power MOSFET with high-k shield dielectric" (Arizona, California Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,351, issued on Nov. 11, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Shielded gate trench power MOSFET with high-k shield dielectric" was invented by Zia Hossain (Tempe, Ariz.), Balaji Padmanabhan (Chandler, Ariz.), Christopher Lawrence Rexer (Scottsdale, Ariz.), Gordon M. Grivna (Mesa, Ariz.) and Sauvik Chowdhury (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one general aspect, an apparatus can include a substrate having a semiconductor region, and a trench defined in the semiconductor region and having a sidewall. The apparatus can include a shield electrode disposed in the trench and insulate...